| PART |
Description |
Maker |
| SB039C015-1-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
|
TRANSYS Electronics Limited
|
| SB040P105-W-AG SB040P105-W-AG_AL SB040P105-W-AG/AL |
Schottky Barrier Diode Wafer 40 Mils, 105 Volt, 1 Amp
|
TRANSYS Electronics Limited
|
| SB090P200-W-AG SB090P200-W-AG_AL SB090P200-W-AG/AL |
Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp
|
TRANSYS Electronics Limited
|
| SB039C040-1-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF.
|
TRANSYS Electronics Limited
|
| SB039C025-1-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 1 Amp, 0.37VF.
|
TRANSYS Electronics Limited
|
| SB039C025-0.5-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
|
TRANSYS Electronics Limited
|
| SB157_106C015-20-W-AG_AL SB157/106C015-20-W-AG/AL |
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF.
|
TRANSYS Electronics Limited
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| KDR720S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR367 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR357 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
